JEOL (6951) Status update summary

Overview of XPS instrument and etching system

• JPS-9030 features dual X-ray sources, a large analysis area over 5 mm, and a vertically mounted Kaufman-type argon ion source.

• The instrument allows for various attachments, enabling flexible analysis options.

• The ion source is mounted in the preparation chamber, allowing vertical irradiation and separation from the measurement chamber.

Advantages of vertical argon ion etching

• Vertical irradiation eliminates shadowing, enabling uniform etching without sample rotation.

• Multiple samples can be analyzed simultaneously with minimal surface roughness effects.

• High ion current from the Kaufman-type source allows effective etching at low accelerating voltages, reducing atomic mixing.

Experimental results and analysis

• SRIM simulations show shallower penetration depth at lower accelerating voltages, maintaining high etching rates.

• AFM measurements confirm that vertical etching suppresses surface roughness compared to tilted etching.

• Depth profiling of multilayer samples reveals that vertical irradiation maintains sharper interfaces and higher steepness.

• Lower accelerating voltages further improve interface steepness, enhancing depth resolution.