Navitas Semiconductor (NVTS) Citi’s 2026 Global TMT Conference summary
Event summary combining transcript, slides, and related documents.
Citi’s 2026 Global TMT Conference summary
8 Sep, 2026Transformation strategy and business pivot
Completed pivot from low-margin consumer/mobile markets to high-value, high-power applications, focusing on AI data centers and grid infrastructure.
Go-to-market strategy shifted to target hyperscalers, XPUs, OEMs, and merchant power companies.
Upgraded application and leadership teams to support new focus areas.
By year-end, mobile will be an insignificant revenue contributor, down from 85%.
Revenue quality has improved, with AI infrastructure expected to be over one-third of revenue.
Technology and market trends
GaN and SiC technologies are central, with SiC suited for high-voltage, robust AC-DC and grid applications, and GaN for high-density, high-frequency DC-DC conversion near compute loads.
Transition to 800V architectures in data centers is underway, with phased adoption: pre-800V (now), sidecar 800V (early next year), native 800V (future), and eventual grid modernization (2028+).
Both GaN and SiC are needed for full participation in the evolving power conversion landscape.
Market models estimate 220–300 GW of new data center deployments by 2030, with significant content opportunity for GaN and SiC.
Growth opportunities and competitive landscape
Estimated $25,000 per MW content opportunity in data centers, split between GaN ($15,000/MW) and SiC ($10,000/MW), with additional upside from grid modernization and circuit protection.
Total serviceable available market (SAM) for GaN/SiC in the U.S. grid projected at $3.5–4.5 billion by 2030, with IVR/VPD potentially doubling this.
Gradual replacement of silicon by GaN and SiC, driven by rising rack power density and customer demand for proven, ready technology.
Competition varies by technology; few companies offer both GaN and SiC, which is valued by hyperscalers and merchant power customers.
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